MANUFACTURING DESCRIPTION

Manufacturer’s JEDEC ID Code: G-Skill Intl
Module Manufacturing Location: 54h
Module Part Number: CL3-4-4-8-Gskill
Module Revision Code: 0000h
Module Manufacturing Date: Week 2, 2004
Module Serial Number: 00000000h

LEGITIMATE ARCHITECTURES

Fundamental Memory Type: DDR SDRAM
DIMM configuration type: Non-ECC/Parity
Number of Row Addresses: 13
Number of Column Addresses: 10
Number of DIMM Banks: 2
Module Bank Density: 256 MB
Number of Banks on SDRAM Device: 4
Module Data Width: 64 bits
Primary SDRAM Width: x8
Error Checking SDRAM Width: N/A
Voltage Interface Level: SSTL 2.5V
Refresh Rate/Type: 7.8 us Self Refresh
DDR SDRAM DIMM Height: N/A

TIMING SPECIFICATIONS

Burst Lengths Supported: 2, 4, 8
CAS# Latencies Supported (tCL): 3T, 2.5T
CS# Latency: 0T
WE# Latency (Write Delay): 1T
Cycle time at Max CAS Latency: 3.6 ns
SDRAM Access from Clock (tAC): 0.65 ns
Minimum Clock Cycle at tCL = X - 0.5: 5.0 ns
Max Data Access Time at tCL = X - 0.5 (tAC): 0.70 ns
Minimum Clock Cycle at tCL = X - 1: 0.0 ns
Max Data Access Time at CL = X - 1 (tAC): 0.00 ns
Minimum Active to Precharge Time (tRAS): 40.0 ns
Minimum RAS to CAS delay (tRCD): 20.0 ns
Minimum Row Precharge Time (tRP): 20.0 ns
Min Active to Active/Auto Refresh Time (tRC): 55.0 ns
Min Auto Ref to Active/Auto Refresh (tRFC): 70.0 ns
Min Row Active to Row Active delay (tRRD): 10.0 ns
Addr and CMD Input Setup Time Before Clock: 0.60 ns
Addr and CMD Input Hold Time After Clock: 0.60 ns
Data Input Setup Time Before Clock: 0.40 ns
Data Input Hold Time After Clock: 0.40 ns
Device Max device cycle time (tCKmax): 10.0 ns
Max skew between DQS and DQ signals: 0.40 ns
Max Read Data Hold Skew Factor: 0.50 ns
Back-to-Back Random Col Access (tCCD): 1T

SPD PROTOCOL

Number of bytes written into SPD: 128
Total number of bytes of SPD: 256
SPD Revision: 0.0
Checksum for Bytes 0-62: 6Ch

SUMMARY SPECIFICATION

Module Type: DDR SDRAM PC4448 (DDR556)
Module Size: 512 MB
Frequency tCL tRCD tRP tRAS tRC tRFC tRRD
278 MHz 3.0 6 6 12 16 20 3
200 MHz 2.5 4 4 8 11 14 2